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of_lidar_iiiv_swir_spad

InGaAs/InP SPAD for 1550 nm

Maturity plannedTargets III-V processDifficulty Very hardPriority 2

InGaAs absorber, InP multiplication single-photon avalanche diode array with gated quenching for eye-safe 1550 nm detection.

Planned. This block is specified in the catalog with its interfaces and targets. No implementation exists yet; the skeleton command below generates a lint-clean shell with its ports and registers.

Interfaces

PortDirectionKindWidthNotes
spadinoutanalog64 
gateinserial1 

Standards

No external standard applies.

Notes

Dyber, Inc. in-house InP process.

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